Publication detail

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

SOLČANSKÝ, M. VANĚK, J. PORUBA, A.

Original Title

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

Type

journal article in Web of Science

Language

English

Original Abstract

For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

Keywords

quinhydrone, chemical passivation

Authors

SOLČANSKÝ, M.; VANĚK, J.; PORUBA, A.

RIV year

2012

Released

27. 4. 2012

Publisher

HINDAWI PUBLISHING CORPORATION

Location

NEW YORK

ISBN

1110-662X

Periodical

INTERNATIONAL JOURNAL OF PHOTOENERGY

Year of study

2012

Number

2012

State

Arab Republic of Egypt

Pages from

1

Pages to

4

Pages count

4

URL

BibTex

@article{BUT91628,
  author="Marek {Solčanský} and Jiří {Vaněk} and Aleš {Poruba}",
  title="Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements",
  journal="INTERNATIONAL JOURNAL OF PHOTOENERGY",
  year="2012",
  volume="2012",
  number="2012",
  pages="1--4",
  issn="1110-662X",
  url="http://www.hindawi.com/journals/ijp/2012/732647/"
}