Publication detail

Realization of Resistorless Lossless Positive and Negative Grounded Inductor Simulators Using Single ZC-CCCITA

HERENCSÁR, N. LAHIRI, A. KOTON, J. VRBA, K. METIN, B.

Original Title

Realization of Resistorless Lossless Positive and Negative Grounded Inductor Simulators Using Single ZC-CCCITA

Type

journal article in Web of Science

Language

English

Original Abstract

This paper is in continuation with the very recent work of Prasad et al. [14], wherein new realizations of grounded and floating positive inductor simulator using current differencing transconductance amplifier (CDTA) are reported. The focus of the paper is to provide alternate realizations of lossless, both positive and negative inductor simulators (PIS and NIS) in grounded form using z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), which can be considered as a derivative of CDTA, wherein the current differencing unit (CDU) is reduced to a current-controlled current inverting unit. We demonstrate that only a single ZC-CCCITA and one grounded capacitor are sufficient to realize grounded lossless PIS or NIS. The proposed circuits are resistorless whose parameters can be controlled through the bias currents. The workability of the proposed PIS is validated by SPICE simulations on three RLC prototypes.

Keywords

Positive inductor simulator (PIS), negative inductor simulator (NIS), grounded lossless inductor, z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA)

Authors

HERENCSÁR, N.; LAHIRI, A.; KOTON, J.; VRBA, K.; METIN, B.

RIV year

2012

Released

2. 4. 2012

ISBN

1210-2512

Periodical

Radioengineering

Year of study

21

Number

1

State

Czech Republic

Pages from

264

Pages to

272

Pages count

9

BibTex

@article{BUT91545,
  author="Norbert {Herencsár} and Abhirup {Lahiri} and Jaroslav {Koton} and Kamil {Vrba} and Bilgin {Metin}",
  title="Realization of Resistorless Lossless Positive and Negative Grounded Inductor Simulators Using Single ZC-CCCITA",
  journal="Radioengineering",
  year="2012",
  volume="21",
  number="1",
  pages="264--272",
  issn="1210-2512"
}