Publication detail

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

BENEŠOVÁ, M., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Original Title

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

English Title

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Type

conference paper

Language

en

Original Abstract

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

English abstract

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

Keywords

near-field optical microscopy, semiconductor, local measurement, contrast, evaluation

RIV year

2003

Released

15.12.2003

Publisher

Vysoké učení technické v Brně, Fakulta strojního inženýrství

Location

Brno

ISBN

80-214-2527-X

Book

Proceedings of International conference Nano´03

Pages from

201

Pages to

205

Pages count

5

Documents

BibTex


@inproceedings{BUT8963,
  author="Markéta {Benešová} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}",
  title="Time-resolved contrast in near-field scanning optical microscopy of semiconductors",
  annote="The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.",
  address="Vysoké učení technické v Brně, Fakulta strojního inženýrství",
  booktitle="Proceedings of International conference Nano´03",
  chapter="8963",
  institution="Vysoké učení technické v Brně, Fakulta strojního inženýrství",
  year="2003",
  month="december",
  pages="201",
  publisher="Vysoké učení technické v Brně, Fakulta strojního inženýrství",
  type="conference paper"
}