Publication detail

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

TOMÁNEK, P., DOBIS, P., GRMELA, L.

Original Title

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

Czech Title

1/f šum v LED a LD z InAs/GaAs s kvantovými tečkami a InGaAs/GaAs/InGaP s kvantovými jámámi

English Title

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

Type

conference paper

Language

en

Original Abstract

Semiconductor light emitting diodes (LEDs) and lasers based on self-organized quantum dots (QD) are very promising emitters with an enhanced radiation hardness. However, this promising feature is devaluated by the large dispersion in size, shape and stoichiometric composition of self-organized quantum dots and surrounding material. The experimental results of LF noise investigation of LEDs based on InAs quantum dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW), laser diodes based on In0.2Ga0.8As quantum wells are presented in this work.

Czech abstract

Polovodičové LED a LD založené na samoorganizovaných kvantových tečkách jsou velmi nadějné zdroje s vyšším jasem. Bohužel je tato vlastnost snižována velkou disperzí co do tvaru, velikosti a stoichiometrického složení samoorganizovaných teček a okolního materiálu. Článek přináší experimentální výsledky nízkofrekvenčního měření LED s InAs kvantovými tečkami, LEDs s InAs kvantovými tečkami s dodatečnou In0.2Ga0.8As kvantovou jámou, laserové diody s In0.2Ga0.8As kvantovými jámami.

English abstract

Semiconductor light emitting diodes (LEDs) and lasers based on self-organized quantum dots (QD) are very promising emitters with an enhanced radiation hardness. However, this promising feature is devaluated by the large dispersion in size, shape and stoichiometric composition of self-organized quantum dots and surrounding material. The experimental results of LF noise investigation of LEDs based on InAs quantum dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW), laser diodes based on In0.2Ga0.8As quantum wells are presented in this work.

Keywords

noise, quantum dots, quantum well, laser diode, LED

RIV year

2003

Released

16.10.2003

Publisher

MtF STU Trnava

Location

Bratislava

ISBN

80-277-1949-8

Book

CO-MAT-TECH 2003, 11th International scientific conference

Pages from

1063

Pages to

1066

Pages count

4

BibTex


@inproceedings{BUT8334,
  author="Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes",
  annote="Semiconductor light emitting diodes (LEDs) and lasers based on self-organized
quantum dots (QD) are very promising emitters with an enhanced radiation hardness.
However, this promising feature is devaluated by the large dispersion in size, shape and
stoichiometric composition of self-organized quantum dots and surrounding material.
The experimental results of LF noise investigation of LEDs based on InAs quantum
dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW),
laser diodes based on In0.2Ga0.8As quantum wells are presented in this work.",
  address="MtF STU Trnava",
  booktitle="CO-MAT-TECH 2003, 11th International scientific conference",
  chapter="8334",
  institution="MtF STU Trnava",
  year="2003",
  month="october",
  pages="1063",
  publisher="MtF STU Trnava",
  type="conference paper"
}