Publication detail

Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals

ELHADIDY, H. ŠIKULA, J. ŠIK, O. GRMELA, L. ZAJAČEK, J.

Original Title

Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals

Czech Title

Nízkofrekvenční šum a iontová difuze v monokrystalech CdTe

English Title

Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals

Type

conference paper

Language

en

Original Abstract

The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out. We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor (M-S) interface causes an additional reduction of the barrier and may be considered as another responsible mechanism for the polarization effect.

Czech abstract

V článku je analyzován efekt difuze iontů na časovou závislost vývoje šumu krystalu a efekt polarizace. Nestabilita závěrného proudu nepropustně pólovaného Schottkyho kontaktu Au - CdTe typu P byla popsána modelem uvažujícím vliv hlubokých akceptorů. Experimentálně bylo zjištěno nízké uvolňování nosičů náboje z pasti. Vzhledem k zjištěnému faktu se na efektu polarizace také podílí difůzní pohyb těžkých ve vyprázdněné zóně přechodu polovodič - kov, což způsobuje další zúžení potenciálové bariéry.

English abstract

The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out. We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor (M-S) interface causes an additional reduction of the barrier and may be considered as another responsible mechanism for the polarization effect.

Keywords

Noise, CdTe, Metal- Semiconductor interface, Ion diffusion

RIV year

2011

Released

22.08.2011

Publisher

IEEE

Location

Kanada

ISBN

978-1-4577-0191-7

Book

21st International Conference on Noise and Fluctuations

Edition number

21

Pages from

1

Pages to

4

Pages count

4

BibTex


@inproceedings{BUT75463,
  author="Hassan Ali Mohamed {Elhadidy} and Josef {Šikula} and Ondřej {Šik} and Lubomír {Grmela} and Jiří {Zajaček}",
  title="Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals",
  annote="The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out.  We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor (M-S) interface causes an additional reduction of the barrier and may be considered as another responsible mechanism for the polarization effect.",
  address="IEEE",
  booktitle="21st International Conference on Noise and Fluctuations",
  chapter="75463",
  howpublished="online",
  institution="IEEE",
  year="2011",
  month="august",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}