Publication detail

PECVD of hexamethyldisiloxane: Pulsed mode

BLAHOVÁ, L. PROCHÁZKA, M. KRČMA, F.

Original Title

PECVD of hexamethyldisiloxane: Pulsed mode

English Title

PECVD of hexamethyldisiloxane: Pulsed mode

Type

conference paper

Language

en

Original Abstract

PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.

English abstract

PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.

Keywords

Optical emission spectroscopy, Hexamethyldisiloxane, Thin film deposition

Released

21.08.2011

Publisher

Fizicki fakultet Beograd

Location

Beograd

ISBN

978-86-84539-08-5

Book

CESPC IV Book of Abstracts

Pages from

111

Pages to

112

Pages count

2

BibTex


@inproceedings{BUT73654,
  author="Lucie {Blahová} and Michal {Procházka} and František {Krčma}",
  title="PECVD of hexamethyldisiloxane: Pulsed mode",
  annote="PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.",
  address="Fizicki fakultet Beograd",
  booktitle="CESPC IV Book of Abstracts",
  chapter="73654",
  howpublished="online",
  institution="Fizicki fakultet Beograd",
  year="2011",
  month="august",
  pages="111--112",
  publisher="Fizicki fakultet Beograd",
  type="conference paper"
}