Publication detail

Pulse mode in plasma polymerization of hexamethyldisiloxane

BLAHOVÁ, L. PROCHÁZKA, M. KRČMA, F.

Original Title

Pulse mode in plasma polymerization of hexamethyldisiloxane

English Title

Pulse mode in plasma polymerization of hexamethyldisiloxane

Type

abstract

Language

en

Original Abstract

PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.

English abstract

PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.

Keywords

Optical emission spectroscopy, Hexamethyldisiloxane, Thin film deposition

Released

14.09.2011

Location

Brno

Pages from

s901

Pages to

s902

Pages count

2

BibTex


@misc{BUT73653,
  author="Lucie {Blahová} and Michal {Procházka} and František {Krčma}",
  title="Pulse mode in plasma polymerization of hexamethyldisiloxane",
  annote="PECVD of hexamethyldisiloxane was performed in order to study dependence of the process on duty cycle. Capacitively coupled plasma was measured via optical emission spectroscopy. Experiment shows that dependence of fragment populations on duty cycle was increasing with increasing duty cycle in the case of constant supplied power, however, there was a maximum detected at 30 % in the case of constant mean power. This point might be an optimal setup for the deposition of SiO2 thin films from hexamethyldisiloxane.",
  booktitle="Chemické Listy 105",
  chapter="73653",
  year="2011",
  month="september",
  pages="s901--s902",
  type="abstract"
}