Publication detail

Low Frequency Noise of Thin Ta2O5 Amorphous Films

PAVELKA, J., ŠIKULA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Original Title

Low Frequency Noise of Thin Ta2O5 Amorphous Films

English Title

Low Frequency Noise of Thin Ta2O5 Amorphous Films

Type

conference paper

Language

en

Original Abstract

A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.

English abstract

A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.

Keywords

low frequency noise, tantalum pentoxide, self-healing, reliability

RIV year

2001

Released

01.01.2001

Publisher

World Scientific

Location

Gainesville, Florida, USA

ISBN

981-02-4677-3

Book

Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001

Pages from

91

Pages to

94

Pages count

4

BibTex


@inproceedings{BUT6854,
  author="Jan {Pavelka} and Josef {Šikula} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Low Frequency Noise of Thin Ta2O5 Amorphous Films",
  annote="A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.",
  address="World Scientific",
  booktitle="Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001",
  chapter="6854",
  institution="World Scientific",
  year="2001",
  month="january",
  pages="91",
  publisher="World Scientific",
  type="conference paper"
}