Publication detail

Near-field photoluminescence as high resolution diagnostics of semiconductor structures

OTEVŘELOVÁ, D., DOBIS, P., BRÜSTLOVÁ, J., TOMÁNEK, P.

Original Title

Near-field photoluminescence as high resolution diagnostics of semiconductor structures

English Title

Near-field photoluminescence as high resolution diagnostics of semiconductor structures

Type

conference paper

Language

en

Original Abstract

Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.

English abstract

Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.

RIV year

2001

Released

27.06.2001

Publisher

VUTIUM

Location

Brno

ISBN

80-24-14-1892-3

Book

Proceedings of Materials structure and micromechanics of fracture

Pages from

439

Pages to

443

Pages count

5

Documents

BibTex


@inproceedings{BUT6096,
  author="Dana {Otevřelová} and Pavel {Dobis} and Jitka {Brüstlová} and Pavel {Tománek}",
  title="Near-field photoluminescence as high resolution diagnostics of semiconductor structures",
  annote="Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.

",
  address="VUTIUM",
  booktitle="Proceedings of Materials structure and micromechanics of fracture",
  chapter="6096",
  institution="VUTIUM",
  year="2001",
  month="june",
  pages="439",
  publisher="VUTIUM",
  type="conference paper"
}