Publication detail

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Original Title

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

English Title

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Type

abstract

Language

en

Original Abstract

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

English abstract

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

Keywords

carrier lifetime, near-field spectroscopy, optical near-field microscopy, semiconductor, deffect.

Released

21.10.2003

Location

Brno

ISBN

80-214-2486-9

Book

Nano´03

Pages from

51

Pages to

51

Pages count

1

Documents

BibTex


@misc{BUT60180,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Time-resolved contrast in near-field scanning optical microscopy of semiconductors",
  annote="The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.
",
  booktitle="Nano´03",
  chapter="60180",
  year="2003",
  month="october",
  pages="51",
  type="abstract"
}