Publication detail

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Original Title

Local photoluminescence measurements of semiconductor surface defects

English Title

Local photoluminescence measurements of semiconductor surface defects

Type

abstract

Language

en

Original Abstract

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

English abstract

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Keywords

photoluminescence, semiconductor, surface deffect, local measurement

Released

15.09.2003

Location

Chernivtsy

Pages from

56

Pages to

56

Pages count

1

Documents

BibTex


@misc{BUT60177,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  annote="The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.",
  booktitle="Correlation optics 6",
  chapter="60177",
  edition="Neuveden",
  year="2003",
  month="september",
  pages="56",
  type="abstract"
}