Publication detail

Near-field local optical spectrosccopy of nanostructured semiconductors

TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.

Original Title

Near-field local optical spectrosccopy of nanostructured semiconductors

Czech Title

Lokální optické psektroskopie v blízkém poli nanostrukturovaných polovodičů

English Title

Near-field local optical spectrosccopy of nanostructured semiconductors

Type

abstract

Language

en

Original Abstract

Probing optical properties of materials and optical characterization of crystallographic defects at the nanometer scale has been inaccessible until recently due to the diffraction limit of light. With the invention of Scanning near-field optical microscopy (SNOM), resolution at the 50-100 nm level using visible or near infrared light is now practical. In addition to describing the SNOM technique, this review focuses on some of the applications of SNOM to the characterization of electronic and photonic materials and devices, with particular emphasis on defects, which are difficult to visualize with other type of microscopes. The unique capability of SNOM to simultaneously measure surface topography and local optoelectronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several examples are discussed. By performing near-field photocurrent (NPC) measurements, SNOM is used to probe electrical activities associated with individual threading dislocations and dislocation networks in strain relaxed, compositionally graded GeSi films. The non-destructive nature of SNOM helps elucidate how microstructural defects in the SrTiO3 bicrystal substrates affect YBa2Cu3O7 film growth and GBJJ performance. Characterization of III-V and II-VI semiconductors, quantum dots grown by strain epitaxy, laser diodes, waveguides, and photonic crystals is also included. The advantages and disadvantages of SNOM in each application will be outlined. Throughout the review, emphasis is placed on how SNOM complements existing materials characterization techniques, as well as how quantitative results can be obtained from SNOM measurements. This study was supported by Czech Ministry of Education, Youth and Sport under research plan MSM 262200022 and grants COST 523.40 and Kontakt ME 544.

Czech abstract

Zkoumání optických vlastností materiálů a optické charakteristiky krystalografických defektů nebylo do nedávné doby možné díky difrakčnímu omezení. Článek se zaměřuje na něktrré aplikace SNOM ve výzkumu defektů elektronických a fotonických součástek. Pomocí SNOM je možné měřit fotoproud v blízkém poli, elektrické aktivity spojené s individuálními dislokacemi a dislokačními sítěmi v napěťově relaxovaných, kompozitně stupňovaných GeSi tenkých vrstvách. Nedestruktivní povaha SNOM umožňuje osvětlit, jak defekty mikrostruktury v SrTiO3 bikrystalickém substrátu ovlivňují růst YBa2Cu3O7 vrstvy. Krátce je popsána charakterizace III-V a II-VI polovodičů, kvantových teček vzniklých napěťovou epitaxí, LD, vlnovodů a fotonických krystalů.

English abstract

Probing optical properties of materials and optical characterization of crystallographic defects at the nanometer scale has been inaccessible until recently due to the diffraction limit of light. With the invention of Scanning near-field optical microscopy (SNOM), resolution at the 50-100 nm level using visible or near infrared light is now practical. In addition to describing the SNOM technique, this review focuses on some of the applications of SNOM to the characterization of electronic and photonic materials and devices, with particular emphasis on defects, which are difficult to visualize with other type of microscopes. The unique capability of SNOM to simultaneously measure surface topography and local optoelectronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several examples are discussed. By performing near-field photocurrent (NPC) measurements, SNOM is used to probe electrical activities associated with individual threading dislocations and dislocation networks in strain relaxed, compositionally graded GeSi films. The non-destructive nature of SNOM helps elucidate how microstructural defects in the SrTiO3 bicrystal substrates affect YBa2Cu3O7 film growth and GBJJ performance. Characterization of III-V and II-VI semiconductors, quantum dots grown by strain epitaxy, laser diodes, waveguides, and photonic crystals is also included. The advantages and disadvantages of SNOM in each application will be outlined. Throughout the review, emphasis is placed on how SNOM complements existing materials characterization techniques, as well as how quantitative results can be obtained from SNOM measurements. This study was supported by Czech Ministry of Education, Youth and Sport under research plan MSM 262200022 and grants COST 523.40 and Kontakt ME 544.

Keywords

optical near-field, spectroscopy, nanostructured semiconductor, quantum dots, carrier recombination.

Released

13.10.2004

Publisher

VUTIUM Brno

Location

Brno

ISBN

80-214-2672-1

Book

Nano ´ 04

Pages from

40

Pages to

40

Pages count

1

BibTex


@misc{BUT59978,
  author="Pavel {Tománek} and Dana {Otevřelová} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Near-field local optical spectrosccopy of nanostructured semiconductors",
  annote="Probing optical properties of materials and optical characterization of crystallographic defects at the nanometer scale has been inaccessible until recently due to the diffraction limit of light. 

With the invention of Scanning near-field optical microscopy (SNOM), resolution at the 50-100 nm level using visible or near infrared light is now practical. In addition to describing the SNOM technique, this review focuses on some of the applications of SNOM to the characterization of electronic and photonic materials and devices, with particular emphasis on defects, which are difficult to visualize with other type of microscopes. 

The unique capability of SNOM to simultaneously measure surface topography and local optoelectronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. 

Several examples are discussed. By performing near-field photocurrent (NPC) measurements, SNOM is used to probe electrical activities associated with individual threading dislocations and dislocation networks in strain relaxed, compositionally graded GeSi films. The non-destructive nature of SNOM helps elucidate how microstructural defects in the SrTiO3 bicrystal substrates affect YBa2Cu3O7 film growth and GBJJ performance. 

Characterization of III-V and II-VI semiconductors, quantum dots grown by strain epitaxy, laser diodes, waveguides, and photonic crystals is also included. The advantages and disadvantages of SNOM in each application will be outlined. Throughout the review, emphasis is placed on how SNOM complements existing materials characterization techniques, as well as how quantitative results can be obtained from SNOM measurements.


This study was supported by Czech Ministry of Education, Youth and Sport under research plan MSM 262200022 and grants COST 523.40 and Kontakt ME 544.
",
  address="VUTIUM Brno",
  booktitle="Nano ´ 04",
  chapter="59978",
  institution="VUTIUM Brno",
  year="2004",
  month="october",
  pages="40",
  publisher="VUTIUM Brno",
  type="abstract"
}