Publication detail

Spectral measurements of semiconductor structures using optical near-field approach

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L.

Original Title

Spectral measurements of semiconductor structures using optical near-field approach

Czech Title

Spektrální měření polovodičových struktur pomocí optické mikroskopie v blízkém poli

English Title

Spectral measurements of semiconductor structures using optical near-field approach

Type

conference paper

Language

en

Original Abstract

The measurements of local photoluminescence, local photocurrent on GaAs/AlGaAs quantum wells under ambient temperature 300 K have been performed. The level of the locally induced signal in function excitation energy, probe-sample distance and sample position has been studied. The method is relevant to the study of the local defects, to evaluate the aging process of devices.

Czech abstract

Bylo provedeno měření lokální fotoluminescence, lokálního fotoproudu na GaAs/AlGaAs kvantových jamách při pokojové teplotě. Byly studovány úroveň lokálně indukovaného signálu v závislosti na excitační energii, vliv vzdálenosti hrot-vzorek. Metoda je relevantní ke studiu lokálních defektů a k hodnocení procesu stárnutí součástek.

English abstract

The measurements of local photoluminescence, local photocurrent on GaAs/AlGaAs quantum wells under ambient temperature 300 K have been performed. The level of the locally induced signal in function excitation energy, probe-sample distance and sample position has been studied. The method is relevant to the study of the local defects, to evaluate the aging process of devices.

Keywords

Semiconductor structures, quantum well, near-field, spectroscopy

RIV year

2003

Released

25.04.2002

Publisher

KU Leuven, COST 523

Location

Leuven, Belgie

Pages from

P55

Pages count

1

BibTex


@inproceedings{BUT5687,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela}",
  title="Spectral measurements of semiconductor structures using optical near-field approach",
  annote="The measurements of local photoluminescence, local photocurrent on GaAs/AlGaAs quantum wells under ambient temperature 300 K have been performed. The level of the locally induced signal in function excitation energy, probe-sample distance and sample position has been studied. The method is relevant to the study of the local defects, to evaluate the aging process of devices.",
  address="KU Leuven, COST 523",
  booktitle="Joint COST-Action workgroup meeting on individual and assembled nanoparticles and quantum dots",
  chapter="5687",
  institution="KU Leuven, COST 523",
  year="2002",
  month="april",
  pages="P55",
  publisher="KU Leuven, COST 523",
  type="conference paper"
}