Publication detail

Silicon-silicon dioxide nanostructure in electrostatic field

HRUŠKA, P. GRMELA, L.

Original Title

Silicon-silicon dioxide nanostructure in electrostatic field

Czech Title

Nanostruktura Si-SIO2 v elektrostatickém poli

English Title

Silicon-silicon dioxide nanostructure in electrostatic field

Type

journal article

Language

en

Original Abstract

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Czech abstract

Článek přináší numerickou analýzu kvantových stavů a pravděpodobnostní funkce Si-SiO2 nanostruktury v proměnné elektrostatickém poli. Je zakreslena posice maxima funkce pravděpodobnosti a je určeno předpětí, nutné pro opuštění struktury. Jsou zkoumány i změny energie základního stavu s předpětím. K výpočtu je použit Poissonův-Schrodingerův model z programu Comsol Multiphysics. Výsledky umožní pochopit elektronické vlastnosti a chování ultraškálované Si-SiO2 paměti využitím polovodičových kvantových teček a Si nanokrystalů, jako jednu z možných aplikací.

English abstract

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Keywords

nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schrödinger numerical analysis, Comsol Multiphysics

RIV year

2010

Released

14.09.2010

Publisher

TU Košice

Location

Košice

Pages from

22

Pages to

25

Pages count

4

BibTex


@article{BUT50849,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Silicon-silicon dioxide nanostructure in electrostatic field",
  annote="Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy  with the bias is also examined.  The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.",
  address="TU Košice",
  chapter="50849",
  institution="TU Košice",
  journal="Acta Electrotechnica et Informatica",
  number="3",
  volume="10",
  year="2010",
  month="september",
  pages="22--25",
  publisher="TU Košice",
  type="journal article"
}