Publication detail

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

GRMELA, L. ŠKARVADA, P. MACKŮ, R. TOMÁNEK, P.

Original Title

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Czech Title

Blízkopolní detekce a lokalizace defektů v solárním článku s monokrystalickým křemíkem

English Title

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Type

journal article

Language

en

Original Abstract

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Czech abstract

Povrchové a objemové defekty v solárním článku nepříznivě působí na účinnost a životnost zařízení. Je-li článek zapojen v závěrném režimu, je možné měřit velikost elektrického signálu z defektů, ale lokalizace defektů pomocí klasických optických metod je obtížná. V článku přinášíme novou kombinaci optických a elektrických měření, která umožní dosažení rozlišovací schopnosti 250 nm. Výsledek je topografická mapa , mapa lokální odrazivosti a mapa konverze světelné energie na elektrickou v oblasti s malými defekty

English abstract

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Keywords

defect, detection, loclaization, solar cell, near-field

RIV year

2011

Released

28.05.2011

Publisher

Inventi

Location

Mumbai Indie

Pages from

1

Pages to

4

Pages count

4

BibTex


@article{BUT50601,
  author="Lubomír {Grmela} and Pavel {Škarvada} and Robert {Macků} and Pavel {Tománek}",
  title="Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell",
  annote="Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.",
  address="Inventi",
  chapter="50601",
  institution="Inventi",
  journal="Inventi Rapid: Energy & Power",
  number="2",
  volume="2011",
  year="2011",
  month="may",
  pages="1--4",
  publisher="Inventi",
  type="journal article"
}