Publication detail

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

GRMELA, L. ŠKARVADA, P. MACKŮ, R. TOMÁNEK, P.

Original Title

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Type

journal article - other

Language

English

Original Abstract

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Keywords

defect, detection, loclaization, solar cell, near-field

Authors

GRMELA, L.; ŠKARVADA, P.; MACKŮ, R.; TOMÁNEK, P.

RIV year

2011

Released

28. 5. 2011

Publisher

Inventi

Location

Mumbai Indie

ISBN

2229-7774

Periodical

Inventi Rapid: Energy & Power

Year of study

2011

Number

2

State

Republic of India

Pages from

1

Pages to

4

Pages count

4

BibTex

@article{BUT50601,
  author="Lubomír {Grmela} and Pavel {Škarvada} and Robert {Macků} and Pavel {Tománek}",
  title="Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell",
  journal="Inventi Rapid: Energy & Power",
  year="2011",
  volume="2011",
  number="2",
  pages="1--4",
  issn="2229-7774"
}