Publication detail

MOSFET Modeling for Curcuit Simulations

MUSIL, V., PROKOP, R., HUB, P.

Original Title

MOSFET Modeling for Curcuit Simulations

English Title

MOSFET Modeling for Curcuit Simulations

Type

conference paper

Language

en

Original Abstract

In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.

English abstract

In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.

Keywords

integrated circuits, MOS transistor, circuit model, modeling, SPICE

RIV year

2002

Released

01.01.2002

Publisher

Vysoké učení technické v Brně

Location

Brno

ISBN

80-214-2180-0

Book

ELECTRONIC DEVICES AND SYSTEMS 02 - PROCEEDINGS

Edition number

1

Pages from

259

Pages to

262

Pages count

4

BibTex


@inproceedings{BUT4958,
  author="Vladislav {Musil} and Roman {Prokop} and Petr {Hub}",
  title="MOSFET Modeling for Curcuit Simulations",
  annote="In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.
",
  address="Vysoké učení technické v Brně",
  booktitle="ELECTRONIC DEVICES AND SYSTEMS 02 - PROCEEDINGS",
  chapter="4958",
  institution="Vysoké učení technické v Brně",
  year="2002",
  month="january",
  pages="259",
  publisher="Vysoké učení technické v Brně",
  type="conference paper"
}