Publication detail

Investigation of excess 1/f noise in CdTe single crystals

ANDREEV, A. GRMELA, L. MORAVEC, P. BOSMAN, G. ŠIKULA, J.

Original Title

Investigation of excess 1/f noise in CdTe single crystals

Czech Title

Investigation of excess 1/f noise in CdTe single crystals

English Title

Investigation of excess 1/f noise in CdTe single crystals

Type

journal article

Language

en

Original Abstract

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109 cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis shows that the excess 1/f noise is caused by the low carrier concentration within the depleted region at the metal-semiconductor junction.

Czech abstract

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109 cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis shows that the excess 1/f noise is caused by the low carrier concentration within the depleted region at the metal-semiconductor junction.

English abstract

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109 cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis shows that the excess 1/f noise is caused by the low carrier concentration within the depleted region at the metal-semiconductor junction.

Keywords

1/f noise; metal-semiconductor junction

RIV year

2010

Released

20.04.2010

Publisher

David Bowden

Location

Bristol, BS1 6BE UK

Pages from

1

Pages to

7

Pages count

7

BibTex


@article{BUT48577,
  author="Alexey {Andreev} and Lubomír {Grmela} and Pavel {Moravec} and Gijs {Bosman} and Josef {Šikula}",
  title="Investigation of excess 1/f noise in CdTe single crystals",
  annote="Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015  cm-3, semi-insulating n-type with n = 1.5 x 109  cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n  in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis shows that the excess 1/f noise is caused by the low carrier concentration within the depleted region at the metal-semiconductor junction.",
  address="David Bowden",
  chapter="48577",
  institution="David Bowden",
  journal="SEMICONDUCTOR SCIENCE AND TECHNOLOGY",
  number="5",
  volume="2010(25)",
  year="2010",
  month="april",
  pages="1--7",
  publisher="David Bowden",
  type="journal article"
}