Publication detail

Detection and localization of defects in monocrystalline silicon solar cell

TOMÁNEK, P. ŠKARVADA, P. MACKŮ, R. GRMELA, L.

Original Title

Detection and localization of defects in monocrystalline silicon solar cell

Czech Title

Detekce a lokalizace defektů v monokrystalickém křemíkovém solárním článku

English Title

Detection and localization of defects in monocrystalline silicon solar cell

Type

journal article

Language

en

Original Abstract

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Czech abstract

Defekty v blízkosti povrchu solárního článku mají nežádoucí vliv na vlastnosti zařízení, jako jsou účinnost a životnost. Když je článek zapojen v inverzním režimu, může být elektrický signál z defektů měřen elektronicky, ale jeho lokalizace je velmi obtížná při použtií klasických optických metod. Článek zavádí novou kombinaci elektrických a optických metod, která vypadá velmi nadějně pro detekci a lokalizaci defektů se submikronovou přesností 250 nm. Vsýledky v mapování topografie, lokální odrazovisti povrchu a lokální konverze elektrické energie na optickou v oblastech s malými defekty silně podporuje rozvoj této techniky .

English abstract

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Keywords

Defect, optoelectronic device, solar cells, near-field

RIV year

2010

Released

01.06.2010

Publisher

Hindawi Publishing Corporation

Location

New York, USA

Pages from

8053251

Pages to

8053255

Pages count

5

BibTex


@article{BUT46975,
  author="Pavel {Tománek} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}",
  title="Detection and localization of defects in monocrystalline silicon solar cell",
  annote="Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When
reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the
localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination
of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of
250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection,
and local light to electric energy conversion measurement in areas with small defects strongly support the development and further
evaluation of the technique.",
  address="Hindawi Publishing Corporation",
  chapter="46975",
  institution="Hindawi Publishing Corporation",
  journal="Advances in Optical Technologies",
  number="805325",
  volume="2010",
  year="2010",
  month="june",
  pages="8053251--8053255",
  publisher="Hindawi Publishing Corporation",
  type="journal article"
}