Publication detail

Detection and localization of defects in monocrystalline silicon solar cell

TOMÁNEK, P. ŠKARVADA, P. MACKŮ, R. GRMELA, L.

Original Title

Detection and localization of defects in monocrystalline silicon solar cell

Type

journal article - other

Language

English

Original Abstract

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Keywords

Defect, optoelectronic device, solar cells, near-field

Authors

TOMÁNEK, P.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

RIV year

2010

Released

1. 6. 2010

Publisher

Hindawi Publishing Corporation

Location

New York, USA

ISBN

1687-6393

Periodical

Advances in Optical Technologies

Year of study

2010

Number

805325

State

United States of America

Pages from

8053251

Pages to

8053255

Pages count

5

BibTex

@article{BUT46975,
  author="Pavel {Tománek} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}",
  title="Detection and localization of defects in monocrystalline silicon solar cell",
  journal="Advances in Optical Technologies",
  year="2010",
  volume="2010",
  number="805325",
  pages="8053251--8053255",
  issn="1687-6393"
}