Publication detail

Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers

TOMÁNEK, P. DOBIS, P. BENEŠOVÁ, M. GRMELA, L.

Original Title

Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers

Czech Title

Studium dynamiky nosičů kvantových tečkách InAs/GaAs na vrstvách InGaAs pomocí blízkého pole

English Title

Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers

Type

journal article

Language

en

Original Abstract

InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the self-assembly process is not well understood heretofore. The reason is, that quantum structures are usually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.

Czech abstract

Kvantové tečky InAs/GaAs s řízenou strukturou otevírají novou cestu k návrhu nových optoelektronických součástek jako jsou jednoelektronové tranzistory neby vysoce paralelní architektura počítačů. Příčné seřazení kvantových teček není dosud zcela objasněno, zejména z důvodu, že kvantové struktury musí být studovány při nízkých teplotách. Na druhou stranu SNOM umožní studovat nanometrické rozměry neofenzivním způsobem za pokojové teploty a to vše s vysokým prostorovým a časovým rozlišením. Článek přináší první výsledky optických studií v blízkém poli kvantových teček.

English abstract

InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the self-assembly process is not well understood heretofore. The reason is, that quantum structures are usually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.

Keywords

semiconductor, InAs/GaAs, quantum dots, carrier dynamics, optical imaging, lateral superresolution, near-field optics

RIV year

2005

Released

15.02.2005

Publisher

TRANS TECH PUBLICATIONS LTD

Location

Zurich-Uetikon

Pages from

151

Pages to

155

Pages count

4

BibTex


@article{BUT46457,
  author="Pavel {Tománek} and Pavel {Dobis} and Markéta {Benešová} and Lubomír {Grmela}",
  title="Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers",
  annote="InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the self-assembly process is not well understood heretofore. The reason is, that quantum structures are usually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.",
  address="TRANS TECH PUBLICATIONS LTD",
  chapter="46457",
  institution="TRANS TECH PUBLICATIONS LTD",
  journal="Materials Science Forum",
  number="1",
  volume="482",
  year="2005",
  month="february",
  pages="151--155",
  publisher="TRANS TECH PUBLICATIONS LTD",
  type="journal article"
}