Publication detail

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

GRMELA, L. KALA, J. TOMÁNEK, P.

Original Title

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Czech Title

Lokální fotoluminescence v InAs/GaAs heterostrukturách s kvantovými tečkami a umělými molekulami

English Title

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Type

journal article

Language

en

Original Abstract

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

Czech abstract

Použití kvantových teček (QDs) jako základního stavebního prvku pro nové optoelektronické součástky je velmi slibné, díky dlouhé životnosti excitovaných stavů elektronů. Studium inter a intrapásové absorpce světla v QDs je užitečné pro nové detektoory i lasery ve střední IČ oblasti. Článek přináší prvotní teorietickou a experimentální studii lokálních optických jevů v n- a p-dotovaných InAs/GaAs QDs a v umělých molekulách tvořených páry QDs.

English abstract

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

Keywords

optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule

RIV year

2006

Released

31.01.2006

Publisher

SPIE

Location

Bellingham, USA

Pages from

517

Pages to

522

Pages count

6

BibTex


@article{BUT45824,
  author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}",
  title="Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules",
  annote="The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.",
  address="SPIE",
  chapter="45824",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="6180",
  volume="6180",
  year="2006",
  month="january",
  pages="517--522",
  publisher="SPIE",
  type="journal article"
}