Publication detail

Drivers for power transistors MOSFET a IGBT

VOREL, P.

Original Title

Drivers for power transistors MOSFET a IGBT

Type

journal article - other

Language

English

Original Abstract

This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.

Key words in English

transistor MOSFET, transistor IGBT, power electronics, power converters, drivers for power switching transistors, galvanic separation

Authors

VOREL, P.

RIV year

2004

Released

1. 1. 2004

ISBN

1213-161X

Periodical

ElectronicsLetters.com - http://www.electronicsletters.com

Year of study

2004

Number

1/5

State

Czech Republic

Pages from

1

Pages to

9

Pages count

9

BibTex

@article{BUT45697,
  author="Pavel {Vorel}",
  title="Drivers for power transistors MOSFET a IGBT",
  journal="ElectronicsLetters.com - http://www.electronicsletters.com",
  year="2004",
  volume="2004",
  number="1/5",
  pages="9",
  issn="1213-161X"
}