Publication detail

Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules

TOMÁNEK, P. GRMELA, L.

Original Title

Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules

Czech Title

Lokální optické jevy v InAs/GaAs heterostrukturách s kvantovými tečkami a umělými molekulami

English Title

Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules

Type

journal article

Language

en

Original Abstract

Due to a long electron lifetime at the excited levels of quantum dot (QDs), the use of QDs as a basis for new optoelectronic devices is very promising. Inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. In the paper the preliminary results of experimental and theoretical studies of the local optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented. The peculiarities in local photoluminescence spectra can be associated with absorption peaks connected with intraband interlevel transitions of electrons and holes between the ground and excited states.

Czech abstract

V důsledku dlouhé životnosti elektronů na excitovaných hladinách kvantových teček (QD), je velmi slibné použít kvantové tečky jako základní prvek nových optoelektronickcých součástek. Studium mezipásmové absorpce i absorpce v pásu je nutná nejen pro výzkum fotodetektorů, ale je i nutnou podmínkou pro vývoj nových typů laserů ve střední IČ oblasti. Článek přináší první teoretické i experimentální výsledky lokálních optických dějů, k nimž dochází v n- a p-dotovaných InAs/GaAs QD a umělých molekulách tvořených páry QD. Význačné vlastnosti lokální spektra fotoluminiscence mohou být spojena s absorpčními maximy, které vyplývají z mezihladinových přechodů elektronů a děr mezi základním a vybuzeným stavem.

English abstract

Due to a long electron lifetime at the excited levels of quantum dot (QDs), the use of QDs as a basis for new optoelectronic devices is very promising. Inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. In the paper the preliminary results of experimental and theoretical studies of the local optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented. The peculiarities in local photoluminescence spectra can be associated with absorption peaks connected with intraband interlevel transitions of electrons and holes between the ground and excited states.

Keywords

optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule, photoluminescence

RIV year

2005

Released

30.08.2005

Publisher

Korean Physical Society

Location

Seoul, South Korea

Pages from

S162

Pages to

S165

Pages count

4

BibTex


@article{BUT42443,
  author="Pavel {Tománek} and Lubomír {Grmela}",
  title="Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules",
  annote="Due to a long electron lifetime at the excited levels of quantum dot (QDs), the use of QDs as a basis for new optoelectronic devices is very promising. Inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers.  In the paper the preliminary results of experimental and theoretical studies of the local optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented. The peculiarities in local photoluminescence spectra can be associated with absorption peaks connected with intraband interlevel transitions of electrons and holes between the ground and excited states.",
  address="Korean Physical Society",
  chapter="42443",
  howpublished="print",
  institution="Korean Physical Society",
  journal="Journal of the Korean Physical Society",
  number="96",
  volume="47",
  year="2005",
  month="august",
  pages="S162--S165",
  publisher="Korean Physical Society",
  type="journal article"
}