Publication detail

Noise and Non-Linearity as Reliability Indicators of Electronic Devices

ŠIKULA, J., SEDLÁKOVÁ, V., DOBIS, P.

Original Title

Noise and Non-Linearity as Reliability Indicators of Electronic Devices

English Title

Noise and Non-Linearity as Reliability Indicators of Electronic Devices

Type

journal article - other

Language

en

Original Abstract

An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. The principles of noise and non-linearity measuring set-up are shown. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and theirs explanation is done. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.

English abstract

An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. The principles of noise and non-linearity measuring set-up are shown. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and theirs explanation is done. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.

Keywords

Noise, non-linearity, reliability indicators.

RIV year

2004

Released

01.01.2004

Pages from

213

Pages to

221

Pages count

9

BibTex


@article{BUT42097,
  author="Josef {Šikula} and Vlasta {Sedláková} and Pavel {Dobis}",
  title="Noise and Non-Linearity as Reliability Indicators of Electronic Devices",
  annote="An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. The principles of noise and non-linearity measuring set-up are shown. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and theirs explanation is done. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.",
  chapter="42097",
  number="4",
  volume="2003",
  year="2004",
  month="january",
  pages="213--221",
  type="journal article - other"
}