Publication detail

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P. BENEŠOVÁ, M. DOBIS, P. BRÜSTLOVÁ, J. UHDEOVÁ, N.

Original Title

Local photoluminescence measurements of semiconductor surface defects

English Title

Local photoluminescence measurements of semiconductor surface defects

Type

journal article in Web of Science

Language

en

Original Abstract

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

English abstract

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

Keywords

Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects

RIV year

2004

Released

10.07.2004

Publisher

SPIE

Location

Bellingham, USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Number

5477

State

US

Pages from

131

Pages to

137

Pages count

7

Documents

BibTex


@article{BUT42085,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  annote="The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

",
  address="SPIE",
  chapter="42085",
  howpublished="print",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="5477",
  year="2004",
  month="july",
  pages="131--137",
  publisher="SPIE",
  type="journal article in Web of Science"
}