Publication detail

Breakdown characteristics and low frequency noise of niobium based capacitors

ŠIKULA, J. VRBA, R. GRMELA, L. ZEDNÍČEK, T. SITA, Z.

Original Title

Breakdown characteristics and low frequency noise of niobium based capacitors

Type

journal article - other

Language

English

Original Abstract

New capacitor technologies based on Niobium (Nb)and Niobium Oxide (NbO) powders in conjunction with niobium pentoxide (Nb2O5) dielectric have been released recently. These technologies are based on processes nearly identical to those of conventional tantalum (Ta) capacitors. One of the key features of the NbO, in contrast to Nb and Ta, is its' high resistance to ignition. This is due to the intrinsically higher ignition energy of NbO material and higher resistance failure mode after dielectric breakdown. This paper describes the behaviour of NbO capacitors after forced dielectric breakdown with both forward and reverse voltages applied. A low frequency analysis of the charge carrier transport mechanism has been performed on the Nb/NbO - Nb2O5 - MnO2 systems and the mechanisms governing current flow and noise sources have been determined. The ideal metal / insulator / semiconductor (MIS) structure is shown in Fig.1. This paper also reviews the basic features of these capacitor technologies and provides a foundation for understanding fluctuation phenomena in the real structure of niobium pentoxide

Key words in English

Niobium Oxide, breakdown, capacitors, ignition energy

Authors

ŠIKULA, J.; VRBA, R.; GRMELA, L.; ZEDNÍČEK, T.; SITA, Z.

RIV year

2003

Released

5. 4. 2003

ISBN

0887-7491

Periodical

Capacitor and Resistor Technology

Year of study

2003

Number

4

State

United States of America

Pages from

53

Pages to

59

Pages count

7

BibTex

@article{BUT41704,
  author="Josef {Šikula} and Radimír {Vrba} and Lubomír {Grmela} and Tomáš {Zedníček} and Zdeněk {Sita}",
  title="Breakdown characteristics and low frequency noise of niobium based capacitors",
  journal="Capacitor and Resistor Technology",
  year="2003",
  volume="2003",
  number="4",
  pages="7",
  issn="0887-7491"
}