Publication detail

Local spectroscopy by scanning near-field optical microscopy

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Original Title

Local spectroscopy by scanning near-field optical microscopy

English Title

Local spectroscopy by scanning near-field optical microscopy

Type

journal article - other

Language

en

Original Abstract

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

English abstract

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Keywords

photoluminescence, local characteristics, SNOM,

RIV year

2004

Released

02.05.1998

ISBN

1210-2717

Periodical

Inženýrská mechanika - Engineering Mechanics

Year of study

5

Number

3

State

CZ

Pages from

215

Pages to

218

Pages count

4

Documents

BibTex


@article{BUT41424,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local spectroscopy by scanning near-field optical microscopy",
  annote="The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. 
The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions 
- of the material luminescence (PL), and 
- the wave-guiding properties of the heterostructure, 
to the spectrum emitted from the diode edge.
",
  chapter="41424",
  journal="Inženýrská mechanika - Engineering Mechanics",
  number="3",
  volume="5",
  year="1998",
  month="may",
  pages="215",
  type="journal article - other"
}