Publication detail

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

TOMÁNEK, P. BENEŠOVÁ, M. DOBIS, P. OTEVŘELOVÁ, D. GRMELA, L. KAWATA, S.

Original Title

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Czech Title

Optická diagnostika v blízkém poli se superrozlišením dynamiky nábojů v polovodičích

English Title

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Type

journal article

Language

en

Original Abstract

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Czech abstract

Charakteristické změny procesů s náboji v polovodičích jsou zobrazeny pomocí rastrovací optické mikroskopie v blízkém poli. Do jednoho vlákna se subvlnovou aperturou je navázáno viditelné čerpací i zkušební IČ záření. To umožní zkoumat rekombinace a difuzi nábojů uvnitř pásu v oxidu křemíku. Hodnoty lokálně měřené životnosti souhlasí s výsledky získanými pomocí konvenčních prostorových technik. Navíc je možné pomocí této měřicí techniky lokalizovat defekty a mapovat oblasti s aktivním rekombinačním procesem.

English abstract

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Keywords

near-field optics, semiconductor, carrier dynamics, superresolution

RIV year

2003

Released

15.07.2003

Publisher

V S V CO

Location

Moscow, Russia

Pages from

131

Pages to

137

Pages count

7

BibTex


@article{BUT41400,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution",
  annote="Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal 
variations, and can map the regions in which a recombination process is active.
",
  address="V S V CO",
  chapter="41400",
  institution="V S V CO",
  journal="Physics of low-dimensional structures",
  number="3/4",
  volume="2003",
  year="2003",
  month="july",
  pages="131--137",
  publisher="V S V CO",
  type="journal article"
}