Publication detail

Atmospheric Pressure Plasma Jet for the Deposition of Oxides Thin Films at High Rates

PULPYTEL, J. BHATT, S. KRČMA, F. MAZÁNKOVÁ, V. AREFI-KHONSARI, F.

Original Title

Atmospheric Pressure Plasma Jet for the Deposition of Oxides Thin Films at High Rates

English Title

Atmospheric Pressure Plasma Jet for the Deposition of Oxides Thin Films at High Rates

Type

conference paper

Language

en

Original Abstract

The atmospheric pressure plasma enhanced chemical vapour deposition is one of hot topics in the field of plasma applications during last years especially due to considerably high growth rates and lower costs. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO) thin films using an atmospheric pressure plasma jet (APPJ) system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The main gas flow consisted of dry air which was introduced through the torch at a flow rate of 108 l/h. The jet, characterized by Tg ~600-800K, was mostly laminar (Re ~1200) at the nozzle exit and became partially turbulent along the torch axis (Re ~3300). The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm). Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800-1000 nm/s, and AFM results revealed that coatings are relatively smooth (Ra ~2 nm).

English abstract

The atmospheric pressure plasma enhanced chemical vapour deposition is one of hot topics in the field of plasma applications during last years especially due to considerably high growth rates and lower costs. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO) thin films using an atmospheric pressure plasma jet (APPJ) system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The main gas flow consisted of dry air which was introduced through the torch at a flow rate of 108 l/h. The jet, characterized by Tg ~600-800K, was mostly laminar (Re ~1200) at the nozzle exit and became partially turbulent along the torch axis (Re ~3300). The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm). Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800-1000 nm/s, and AFM results revealed that coatings are relatively smooth (Ra ~2 nm).

Keywords

atmospheric jet, plasma deposition, oxide thin films, high deposition rate

RIV year

2010

Released

12.09.2010

ISBN

978-80-89186-70-9

Book

HAKONE XII - Book of Contributed Papers

Pages from

467

Pages to

471

Pages count

5

BibTex


@inproceedings{BUT35287,
  author="Jerome {Pulpytel} and Sudhir {Bhatt} and František {Krčma} and Věra {Mazánková} and Farzaneh {Arefi-Khonsari}",
  title="Atmospheric Pressure Plasma Jet for the Deposition of Oxides Thin Films at High Rates",
  annote="The atmospheric pressure plasma enhanced chemical vapour deposition is one of hot topics in the field of plasma applications during last years especially due to considerably high growth rates and lower costs. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO) thin films using an atmospheric pressure plasma jet (APPJ) system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The main gas flow consisted of dry air which was introduced through the torch at a flow rate of 108 l/h. The jet, characterized by Tg ~600-800K, was mostly laminar (Re ~1200) at the nozzle exit and became partially turbulent along the torch axis (Re ~3300). The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm). Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800-1000 nm/s, and AFM results revealed that coatings are relatively smooth (Ra ~2 nm).",
  booktitle="HAKONE XII - Book of Contributed Papers",
  chapter="35287",
  howpublished="print",
  year="2010",
  month="september",
  pages="467--471",
  type="conference paper"
}