Publication detail

Bulk Resistance Decay in CdTe

ANDREEV, A. GRMELA, L. ŠIKULA, J. CHVÁTAL, M. RAŠKA, M.

Original Title

Bulk Resistance Decay in CdTe

Czech Title

Bulk Resistance Decay in CdTe

English Title

Bulk Resistance Decay in CdTe

Type

conference paper

Language

en

Original Abstract

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Czech abstract

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

English abstract

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Keywords

CdTe single crystal; relaxation process; deep level defects

RIV year

2009

Released

18.05.2009

Publisher

Institute of Electrical and Electronics Engineers, St. Petersburg

Location

St. Petersburg, Russia

ISBN

978-1-4244-3861-7

Book

IEEE EUROCON 2009

Pages from

1181

Pages to

1185

Pages count

4

BibTex


@inproceedings{BUT33591,
  author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Miloš {Chvátal} and Michal {Raška}",
  title="Bulk Resistance Decay in CdTe",
  annote="Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.",
  address="Institute of Electrical and Electronics Engineers, St. Petersburg",
  booktitle="IEEE EUROCON 2009",
  chapter="33591",
  howpublished="print",
  institution="Institute of Electrical and Electronics Engineers, St. Petersburg",
  year="2009",
  month="may",
  pages="1181--1185",
  publisher="Institute of Electrical and Electronics Engineers, St. Petersburg",
  type="conference paper"
}