Publication detail

Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

KOPECKÝ, M. CHVÁTAL, M. SEDLÁKOVÁ, V.

Original Title

Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

Type

conference paper

Language

English

Original Abstract

The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis.

Keywords

Tantalum Capacitor, Thin Film, Leakage current, Ta205

Authors

KOPECKÝ, M.; CHVÁTAL, M.; SEDLÁKOVÁ, V.

RIV year

2010

Released

11. 5. 2011

Publisher

Piotr Firek, Ryszard Kisiel

Location

Koszykowa 75 00 662 Warsaw Poland

ISBN

978-83-7207-874-2

Book

Polymer Electronics and Nanotechnologies: towards System Integration

Edition

first

Pages from

137

Pages to

139

Pages count

3

BibTex

@inproceedings{BUT30780,
  author="Martin {Kopecký} and Miloš {Chvátal} and Vlasta {Sedláková}",
  title="Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors",
  booktitle="Polymer Electronics and Nanotechnologies: towards System Integration",
  year="2011",
  series="first",
  pages="137--139",
  publisher="Piotr Firek, Ryszard Kisiel",
  address="Koszykowa 75
00 662 
Warsaw
Poland",
  isbn="978-83-7207-874-2"
}