Publication detail

Temperature dependence of RTS noise - trap activation energy

HAVRÁNEK, J. PAVELKA, J. ŠIKULA, J. GRMELA, L.

Original Title

Temperature dependence of RTS noise - trap activation energy

Czech Title

Teplotní zavislost RTS šumu - aktivační energie pastí

English Title

Temperature dependence of RTS noise - trap activation energy

Type

conference paper

Language

en

Original Abstract

The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is laid temperature dependence of RTS capture and emission process. It was observed that the current changes are consistent with a single electron being removed from the channel and captured in a localized defect state. It is also quite clear that the frequency of transitions (i.e. the time constant of the associated trap) is strongly dependent on temperature. For higher temperatures, the number of transitions increases promptly. In addition, one can see that at elevated temperatures the current fluctuations begin to resemble the trace, which coincides with a 1/f noise. In the experimental part, n-MOSFET sample N11 was investigated. The RTS noise was very reproducible and the temporal fluctuations in the channel were observed, when the device operated in linear regimes with fixed gate voltage UG. It was possible to find a range in T and UG, for which observed noise randomly switched between two discrete levels, similar to the behavior reported by others. Finally, activation energies for both capture and emission were determinated.

Czech abstract

Bylo pozorováno, že změna proudu je konzistentní s předpokladem přechodu jednotlivých elektronů do pastí na rozhraní nebo ve struktuře oxidu.

English abstract

The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is laid temperature dependence of RTS capture and emission process. It was observed that the current changes are consistent with a single electron being removed from the channel and captured in a localized defect state. It is also quite clear that the frequency of transitions (i.e. the time constant of the associated trap) is strongly dependent on temperature. For higher temperatures, the number of transitions increases promptly. In addition, one can see that at elevated temperatures the current fluctuations begin to resemble the trace, which coincides with a 1/f noise. In the experimental part, n-MOSFET sample N11 was investigated. The RTS noise was very reproducible and the temporal fluctuations in the channel were observed, when the device operated in linear regimes with fixed gate voltage UG. It was possible to find a range in T and UG, for which observed noise randomly switched between two discrete levels, similar to the behavior reported by others. Finally, activation energies for both capture and emission were determinated.

Keywords

RTS noise, temperature dependence, trap activation energy

RIV year

2007

Released

17.11.2007

Publisher

VUT

Location

Brno

ISBN

978-80-7355-078-3

Book

New trends in physics

Edition number

1

Pages from

35

Pages to

38

Pages count

4

BibTex


@inproceedings{BUT28535,
  author="Jan {Havránek} and Jan {Pavelka} and Josef {Šikula} and Lubomír {Grmela}",
  title="Temperature dependence of RTS noise - trap activation energy",
  annote="The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is laid temperature dependence of RTS capture and emission process. It was observed that the current changes are consistent with a single electron being removed from the channel and captured in a localized defect state. It is also quite clear that the frequency of transitions (i.e. the time constant of the associated trap) is strongly dependent on temperature. For higher temperatures, the number of transitions increases promptly. In addition, one can see that at elevated temperatures the current fluctuations begin to resemble the trace, which coincides with a 1/f noise. In the experimental part, n-MOSFET sample N11 was investigated. The RTS noise was very reproducible and the temporal fluctuations in the channel were observed, when the device operated in linear regimes with fixed gate voltage UG. It was possible to find a range in T and UG, for which observed noise randomly switched between two discrete levels, similar to the behavior reported by others. Finally, activation energies for both capture and emission were determinated.",
  address="VUT",
  booktitle="New trends in physics",
  chapter="28535",
  institution="VUT",
  year="2007",
  month="november",
  pages="35--38",
  publisher="VUT",
  type="conference paper"
}