Publication detail

RTS noise - carrier capture and emission event duration

HAVRÁNEK, J. ŠIKULA, J. PAVELKA, J. GRMELA, L.

Original Title

RTS noise - carrier capture and emission event duration

Czech Title

RTS šum - doba zachycení a emise

English Title

RTS noise - carrier capture and emission event duration

Type

conference paper

Language

en

Original Abstract

The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. With a shorter observation time (number of RTS pulses - 7x105) the capture and emission time constants exactly follow an inverse carrier density dependence predicted by the standard Shockley-Read-Hall kinetics (SRH). On the other hand, with longer observation times (the number of pulses - 15x106 - more than 30 hours), the second emission process, which continues a parallel with the capture process ?c, is observed and simple SRH theory is disclaimed. Thus was proved that the occupation time probability density for the emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential. The distributions of the times in the 'high' and 'low' states according to SRH kinetics are exponential, in semi-logarithmic plot the histograms of the 'high' and 'low' states has the linear decay.

Czech abstract

Analýza RTS šumu v tomto článku vysvětluje proces zachycení a emise nosiče náboje v MOS struktuře. Důraz je kladen na ty procesy, které se liší od teorie popsané SRH kinetikou. Pro kratší pozorovací časy, je průběh zachycení a emise v semilogaritmickém zobrazení lineární a dle předpokladů kopíruje průběh předpovězený SRH, pro delší pozorovací časy emisní proces je dvoustavový a předurčuje vznik dalšího procesu ve vedení proudu v MOS struktuře.

English abstract

The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. With a shorter observation time (number of RTS pulses - 7x105) the capture and emission time constants exactly follow an inverse carrier density dependence predicted by the standard Shockley-Read-Hall kinetics (SRH). On the other hand, with longer observation times (the number of pulses - 15x106 - more than 30 hours), the second emission process, which continues a parallel with the capture process ?c, is observed and simple SRH theory is disclaimed. Thus was proved that the occupation time probability density for the emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential. The distributions of the times in the 'high' and 'low' states according to SRH kinetics are exponential, in semi-logarithmic plot the histograms of the 'high' and 'low' states has the linear decay.

Keywords

RTS noise, capture time, emission time, SRH kinetic

RIV year

2007

Released

16.11.2007

Publisher

VUT Brno

Location

Brno

ISBN

978-80-7355-078-3

Book

New trends in Physics

Edition

VUT

Edition number

1

Pages from

31

Pages to

34

Pages count

4

BibTex


@inproceedings{BUT28534,
  author="Jan {Havránek} and Josef {Šikula} and Jan {Pavelka} and Lubomír {Grmela}",
  title="RTS noise - carrier capture and emission event duration",
  annote="The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. With a shorter observation time (number of RTS pulses - 7x105) the capture and emission time constants exactly follow an inverse carrier density dependence predicted by the standard Shockley-Read-Hall kinetics (SRH). On the other hand, with longer observation times (the number of pulses - 15x106 - more than 30 hours), the second emission process, which continues a parallel with the capture process ?c, is observed and simple SRH theory is disclaimed. Thus was proved that the occupation time probability density for the emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential. The distributions of the times in the 'high' and 'low' states according to SRH kinetics are exponential, in semi-logarithmic plot the histograms of the 'high' and 'low' states has the linear decay.",
  address="VUT Brno",
  booktitle="New trends in Physics",
  chapter="28534",
  edition="VUT",
  institution="VUT Brno",
  year="2007",
  month="november",
  pages="31--34",
  publisher="VUT Brno",
  type="conference paper"
}