Publication detail

Semiconductor devices simulation using drift diffusion scheme

POKORNÝ, M. RAIDA, Z.

Original Title

Semiconductor devices simulation using drift diffusion scheme

English Title

Semiconductor devices simulation using drift diffusion scheme

Type

conference paper

Language

en

Original Abstract

The paper deals with the numerical modeling of the semiconductor devices. The drift-diffusion macro model of the free carriers transport is discussed and combined with the Poisson equation to evaluation of device features. The thermal phenomenon is considered in correct physical model of the power components. The basic semiconductor equations are summarized, and modeling issues are discussed. The demonstrative simulation of the Gunn diode is performed in COMSOL Multiphysics computation environment using finite element method.

English abstract

The paper deals with the numerical modeling of the semiconductor devices. The drift-diffusion macro model of the free carriers transport is discussed and combined with the Poisson equation to evaluation of device features. The thermal phenomenon is considered in correct physical model of the power components. The basic semiconductor equations are summarized, and modeling issues are discussed. The demonstrative simulation of the Gunn diode is performed in COMSOL Multiphysics computation environment using finite element method.

Keywords

Gunn effect, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

RIV year

2008

Released

25.08.2008

Publisher

VUT v Brně, FEKT

Location

Brno

ISBN

978-80-214-3709-8

Book

Sborník příspěvků konference ZVŮLE 2008

Pages from

200

Pages to

203

Pages count

4

BibTex


@inproceedings{BUT27691,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Semiconductor devices simulation using drift diffusion scheme",
  annote="The paper deals with the numerical modeling of the semiconductor devices. The drift-diffusion macro model of the free carriers transport is discussed and combined with the Poisson equation to evaluation of device features. The thermal phenomenon is considered in correct physical model of the power components. The basic semiconductor equations are summarized, and modeling issues are discussed. The demonstrative simulation of the Gunn diode is performed in COMSOL Multiphysics computation environment using finite element method.",
  address="VUT v Brně, FEKT",
  booktitle="Sborník příspěvků konference ZVŮLE 2008",
  chapter="27691",
  howpublished="electronic, physical medium",
  institution="VUT v Brně, FEKT",
  year="2008",
  month="august",
  pages="200--203",
  publisher="VUT v Brně, FEKT",
  type="conference paper"
}