Publication detail

Nonlinear On-chip Capacitor Characterization

SUTORÝ, T. KOLKA, Z. BIOLEK, D. BIOLKOVÁ, V.

Original Title

Nonlinear On-chip Capacitor Characterization

English Title

Nonlinear On-chip Capacitor Characterization

Type

conference paper

Language

en

Original Abstract

The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35um CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was used for MOSCAPs characterization in full operating voltage range.

English abstract

The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35um CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was used for MOSCAPs characterization in full operating voltage range.

Keywords

CBCM, testing, MOSCAP

RIV year

2007

Released

01.09.2007

Publisher

IEEE

Location

Sevilla, Spain

ISBN

978-1-4244-1341-6

Book

Proceedings of the 18th European Conference on Circuit Theory and Design ECCTD'07

Pages from

220

Pages to

223

Pages count

4

BibTex


@inproceedings{BUT23792,
  author="Tomáš {Sutorý} and Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}",
  title="Nonlinear On-chip Capacitor Characterization",
  annote="The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35um CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was used for MOSCAPs characterization in full operating voltage range.",
  address="IEEE",
  booktitle="Proceedings of the 18th European Conference on Circuit Theory and Design ECCTD'07",
  chapter="23792",
  institution="IEEE",
  year="2007",
  month="september",
  pages="220--223",
  publisher="IEEE",
  type="conference paper"
}