Publication detail

Analysis of the CdTe Hole Concentration and the Hole Mobility

ANDREEV, A. GRMELA, L. ŠIKULA, J. ZAJAČEK, J.

Original Title

Analysis of the CdTe Hole Concentration and the Hole Mobility

Czech Title

Analýza Koncentrace a Pohyblivosti Děr Kadmium Telluridu

English Title

Analysis of the CdTe Hole Concentration and the Hole Mobility

Type

conference paper

Language

en

Original Abstract

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.

Czech abstract

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.

English abstract

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.

Keywords

Hole concentration; hole mobility; Fermi level

RIV year

2007

Released

01.05.2007

Publisher

Dan Pitica

Location

Cluj-Napoca, Romania

ISBN

978-973-713-174-4

Book

30th International Spring Seminar on Electronics Technology 2007

Edition

MEDIAMIRA

Edition number

1

Pages from

86

Pages to

87

Pages count

2

BibTex


@inproceedings{BUT23288,
  author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Jiří {Zajaček}",
  title="Analysis of the CdTe Hole Concentration and the Hole Mobility",
  annote="The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.",
  address="Dan Pitica",
  booktitle="30th International Spring Seminar on Electronics Technology 2007",
  chapter="23288",
  edition="MEDIAMIRA",
  institution="Dan Pitica",
  year="2007",
  month="may",
  pages="86--87",
  publisher="Dan Pitica",
  type="conference paper"
}