Publication detail

Fermi Level Position in the Cadmium Telluride Detrector

ANDREEV, A. GRMELA, L.

Original Title

Fermi Level Position in the Cadmium Telluride Detrector

Czech Title

Pozice Fremího hladiny v CdTe detektoru

English Title

Fermi Level Position in the Cadmium Telluride Detrector

Type

conference paper

Language

en

Original Abstract

The Fermi level position in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA=1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours.

Czech abstract

The Fermi level position in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA=1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours. During this measurement the temperature was increased from 300K up to 400K and then decreased down to 300K. The Fermi level position was calculated for this measurement. Calculations show that the Fermi level position doesn't change simultaneously with the temperature changing. The hole concentration depends on the Fermi level. The closer the Fermi level to the acceptor level, the higher the hole concentration.

English abstract

The Fermi level position in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA=1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours.

Keywords

Fermi level; depletion layer; hole concentration; hole mobility

RIV year

2007

Released

01.05.2007

Publisher

Dan Pitica

Location

Cluj-Napoca, Romania

ISBN

978-973-713-174-4

Book

30th International Spring Seminar on Electronics Technology 2007

Edition

MEDIAMIRA

Edition number

1

Pages from

84

Pages to

85

Pages count

2

BibTex


@inproceedings{BUT23276,
  author="Alexey {Andreev} and Lubomír {Grmela}",
  title="Fermi Level Position in the Cadmium Telluride Detrector",
  annote="The Fermi level position in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA=1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours.",
  address="Dan Pitica",
  booktitle="30th International Spring Seminar on Electronics Technology 2007",
  chapter="23276",
  edition="MEDIAMIRA",
  institution="Dan Pitica",
  year="2007",
  month="may",
  pages="84--85",
  publisher="Dan Pitica",
  type="conference paper"
}