Publication detail

The Effect of Contacts Metal - Semiconductor on Low Frequency Noise

ANDREEV, A. ZAJAČEK, J. ŠIKULA, J. GRMELA, L. HOLCMAN, V.

Original Title

The Effect of Contacts Metal - Semiconductor on Low Frequency Noise

Czech Title

The Effect of Contacts Metal - Semiconductor on Low Frequency Noise

English Title

The Effect of Contacts Metal - Semiconductor on Low Frequency Noise

Type

conference paper

Language

en

Original Abstract

Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility

Czech abstract

Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility

English abstract

Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility

Keywords

1/f noise; contact Metal - Semiconductor

RIV year

2007

Released

01.08.2007

Publisher

Jozsef Vesza

Location

Miskolc, Hungary

ISBN

978-963-661-779-0

Book

6th International Conference of PhD Students

Edition

1

Edition number

1

Pages from

173

Pages to

178

Pages count

6

BibTex


@inproceedings{BUT23188,
  author="Alexey {Andreev} and Jiří {Zajaček} and Josef {Šikula} and Lubomír {Grmela} and Vladimír {Holcman}",
  title="The Effect of Contacts Metal - Semiconductor on Low Frequency Noise",
  annote="Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility",
  address="Jozsef Vesza",
  booktitle="6th International Conference of PhD Students",
  chapter="23188",
  edition="1",
  institution="Jozsef Vesza",
  year="2007",
  month="august",
  pages="173--178",
  publisher="Jozsef Vesza",
  type="conference paper"
}