Publication detail

Local near-field scanning optical microscopy and spectroscopy of nanostructures

TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.

Original Title

Local near-field scanning optical microscopy and spectroscopy of nanostructures

Czech Title

Lokální mikroskopie a spektroskopie nanostrusktur pomocí blízkého optického pole

English Title

Local near-field scanning optical microscopy and spectroscopy of nanostructures

Type

conference paper

Language

en

Original Abstract

Visible and near infrared Scanning Near Field Optical Microscopy (SNOM) was used to characterize nanostructured semiconductor materials and structures. SNOM is a relatively new technique that combines the versatility of optical microscopy with the resolution of a scanning probe microscope. Light coupled into a tapered optical fiber is used for excitation. The fiber probe is scanned over the sample while being held ~10 nm above the surface. At this point, any number of high resolution (~100 nm) optical measurements can be made. In this work, the SNOM-induced photocurrent in GaAs devices was measured.

Czech abstract

Optická mikroskopie v blízkém poli (SNOM)ve viditelné a IČ oblasti je použita k charakterizování nanostrukturovaných polovodičových materiálů. SNOM je relativně nová technika, která spojuje výhody optického mikroskopu s rozlišením rastrovacího mikroskopu. Sonda ze špičatého optického vlákna osvětluje předmět ze vzdálenosti ~10 nm a v této vzdálenosti je doaženo rozlišení ~100 nm. V této práci bylo pomocí SNOM provedeno měření lokálně indukovaného fotoproudu v GaAs strukturách.

English abstract

Visible and near infrared Scanning Near Field Optical Microscopy (SNOM) was used to characterize nanostructured semiconductor materials and structures. SNOM is a relatively new technique that combines the versatility of optical microscopy with the resolution of a scanning probe microscope. Light coupled into a tapered optical fiber is used for excitation. The fiber probe is scanned over the sample while being held ~10 nm above the surface. At this point, any number of high resolution (~100 nm) optical measurements can be made. In this work, the SNOM-induced photocurrent in GaAs devices was measured.

Keywords

nanostructures, near-field spectroscopy, local optical properties, local photolumine-scence, locally induced photocurrent

RIV year

2005

Released

10.02.2005

Publisher

Brno University of Technology

Location

Brno

ISBN

80-214-2793-0

Book

Nano´04

Pages from

188

Pages to

193

Pages count

6

BibTex


@inproceedings{BUT17006,
  author="Pavel {Tománek} and Dana {Otevřelová} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Local near-field scanning optical microscopy and spectroscopy of nanostructures",
  annote="Visible and near infrared Scanning Near Field Optical Microscopy (SNOM) was used to characterize nanostructured semiconductor materials and structures. SNOM is a relatively new technique that combines the versatility of optical microscopy with the resolution of a scanning probe microscope. Light coupled into a tapered optical fiber is used for excitation. The fiber probe is scanned over the sample while being held ~10 nm above the surface. At this point, any number of high resolution (~100 nm) optical measurements can be made. In this work, the SNOM-induced photocurrent in GaAs devices was measured.",
  address="Brno University of Technology",
  booktitle="Nano´04",
  chapter="17006",
  howpublished="print",
  institution="Brno University of Technology",
  year="2005",
  month="february",
  pages="188--193",
  publisher="Brno University of Technology",
  type="conference paper"
}