Publication detail

Noise and Carge Storage in Nb2O5 Thin Films

SEDLÁKOVÁ, V. ŠIKULA, J. GRMELA, L. HÖSCHEL, P. SITA, Z. HASHIGUCHI, S. TACANO, M.

Original Title

Noise and Carge Storage in Nb2O5 Thin Films

Czech Title

Noise and Carge Storage in Nb2O5 Thin Films

English Title

Noise and Carge Storage in Nb2O5 Thin Films

Type

conference paper

Language

en

Original Abstract

A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.

Czech abstract

A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.

English abstract

A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.

Keywords

Noise, Poole-Frenkel transport, Tunnelling, Niobium Pentoxide, MIS structure

RIV year

2005

Released

01.01.2005

Publisher

American Institute of Physics

Location

United States of America

ISBN

0-7354-0267-1

Book

Noise and Fluctuations

Pages from

135

Pages to

138

Pages count

4

BibTex


@inproceedings{BUT16506,
  author="Vlasta {Sedláková} and Josef {Šikula} and Lubomír {Grmela} and Pavel {Höschel} and Zdeněk {Sita} and Sumihisa {Hashiguchi} and Munecazu {Tacano}",
  title="Noise and Carge Storage in Nb2O5 Thin Films",
  annote="A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.",
  address="American Institute of Physics",
  booktitle="Noise and Fluctuations",
  chapter="16506",
  institution="American Institute of Physics",
  year="2005",
  month="january",
  pages="135",
  publisher="American Institute of Physics",
  type="conference paper"
}