Publication detail

Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage

PRÁŠEK, J. HOUŠKA, D. HRDÝ, R. HUBÁLEK, J. SCHMID, U.

Original Title

Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage

Type

conference paper

Language

English

Original Abstract

In this paper we optimize cryogenic deep reactive ion etching processes to achieve the best aspect ratios of holes in a silicon substrate that is supposed to be used for fabrication of on-chip energy storage. By optimizing capacitively coupled plasma source power and oxygen flow, aspect ratio of 28:1 for holes of 2 µm in diameter was achieved. Bottling effect was suppressed by tuning capacitively coupled plasma, inductively coupled plasma sources and process pressure at the same time. The smoothness and purity of the hole walls are other parameters we investigate using atomic force microscopy and X-ray photoelectron spectroscopy.

Keywords

dry etching; DRIE; cryogenic process; Bosch process; energy storage

Authors

PRÁŠEK, J.; HOUŠKA, D.; HRDÝ, R.; HUBÁLEK, J.; SCHMID, U.

Released

26. 8. 2019

Publisher

IEEE Computer Society

Location

Poland

ISBN

978-1-7281-1874-1

Book

42st International Spring Seminar on Electronics Technology ISSE2019

ISBN

2161-2536

Periodical

International Spring Seminar on Electronics Technology ISSE

Year of study

2019

State

United States of America

Pages from

1

Pages to

6

Pages count

6

URL

https://ieeexplore.ieee.org/abstract/document/8810293

BibTex

@inproceedings{BUT161135,
  author="Jan {Prášek} and David {Houška} and Radim {Hrdý} and Jaromír {Hubálek} and Ulrich {Schmid}",
  title="Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage
",
  booktitle="42st International Spring Seminar on Electronics Technology ISSE2019",
  year="2019",
  journal="International Spring Seminar on Electronics Technology ISSE",
  volume="2019",
  pages="1--6",
  publisher="IEEE Computer Society",
  address="Poland",
  doi="10.1109/ISSE.2019.8810293",
  isbn="978-1-7281-1874-1",
  issn="2161-2536",
  url="https://ieeexplore.ieee.org/abstract/document/8810293"
}