Publication detail

The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

BENDOVÁ, M. PYTLÍČEK, Z. PRÁŠEK, J. MOZALEV, A.

Original Title

The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

Type

journal article in Web of Science

Language

English

Original Abstract

Hafnium-oxide nanostructures of controlled composition and properties are in demand for modern electronic and optical engineering. Here hafnium-oxide nanostructured films are synthesized on substrates via the anodizing/re-anodizing of a thin Hf layer through a porous anodic alumina (PAA) film in 0.2 M H3PO4 electrolyte and examined by SEM, EIS, and Mott-Schottky analysis. The films are composed of HfO nanorods, which grow in the pores, anchored to a continuous HfO2 bottom layer by tiny HfOx nanoroots penetrating the alumina barrier layer. The understanding of film nucleation and growth is advanced through disclosing the hidden features and field-assisted modifications of the metaloxide interfaces, such as O-2-filled nanosized voids and individual hafnium-oxide nanoroots dominating within the alumina barrier layer and securing electron transport to each nanorod. The films reveal a unique combination of electrical properties, such that the bottom oxide behaves like an ideal dielectric whereas the roots and rods show semiconducting behavior. Potential applications include high-k dielectrics for high-voltage electrolytic capacitors, semiconducting active layers for gas sensing, or photoanodes for photoelectrochemical water splitting.

Keywords

Porous anodic alumina; Hafnium oxide; Anodizing; Dielectric; Semiconductor

Authors

BENDOVÁ, M.; PYTLÍČEK, Z.; PRÁŠEK, J.; MOZALEV, A.

Released

10. 12. 2019

Publisher

PERGAMON-ELSEVIER SCIENCE LTD

Location

OXFORD

ISBN

0013-4686

Periodical

Electrochimica Acta

Year of study

327

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

12

Pages count

12

URL

https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub

BibTex

@article{BUT160882,
  author="Mária {Bendová} and Zdeněk {Pytlíček} and Jan {Prášek} and Alexander {Mozalev}",
  title="The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films",
  journal="Electrochimica Acta",
  year="2019",
  volume="327",
  number="1",
  pages="1--12",
  doi="10.1016/j.electacta.2019.135029",
  issn="0013-4686",
  url="https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub"
}