Publication detail

A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

HÁZE, J. HOFMAN, J.

Original Title

A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

English Title

A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

Type

journal article - other

Language

en

Original Abstract

The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

English abstract

The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

Keywords

automated test equipment, thermoelectric cooler, thermometers, test software, test methods, temperatureeffects, RADFET, TID, PMOS, temperature coefficients, MTC

Released

15.07.2019

Publisher

FEI STU Bratislava

Location

Bratislava

Pages from

227

Pages to

235

Pages count

9

URL

Documents

BibTex


@article{BUT158044,
  author="Jiří {Háze} and Jiří {Hofman}",
  title="A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics",
  annote="The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.",
  address="FEI STU Bratislava",
  chapter="158044",
  doi="10.2478/jee-2019-0031",
  howpublished="online",
  institution="FEI STU Bratislava",
  number="3",
  volume="70",
  year="2019",
  month="july",
  pages="227--235",
  publisher="FEI STU Bratislava",
  type="journal article - other"
}