Publication detail

Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors

STÖGER-POLLACH, M. BUKVIŠOVÁ, K. SCHWARZ, S. KVAPIL, M. ŠAMOŘIL, T. HORÁK, M.

Original Title

Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors

Type

journal article in Web of Science

Language

English

Original Abstract

Cathodoluminescence has attracted interest in scanning transmission electron microscopy since the advent of commercial available detection systems with high efficiency, like the Gatan Vulcan or the Attolight Mönch system. In this work we discuss light emission caused by high-energy electron beams when traversing a semiconducting specimen. We find that it is impossible to directly interpret the spectrum of the emitted light to the inter-band transitions excited by the electron beam, because the Čerenkov effect and the related light guiding modes as well as transition radiation is altering the spectra. Total inner reflection and subsequent interference effects are changing the spectral shape dependent on the sample shape and geometry, sample thickness, and beam energy, respectively. A detailed study on these parameters is given using silicon and GaAs as test materials

Keywords

Cathodoluminescence; Cerenkov radiation; Transition radiation; STEM

Authors

STÖGER-POLLACH, M.; BUKVIŠOVÁ, K.; SCHWARZ, S.; KVAPIL, M.; ŠAMOŘIL, T.; HORÁK, M.

Released

1. 5. 2019

ISBN

0304-3991

Periodical

Ultramicroscopy

Year of study

200

Number

1

State

Kingdom of the Netherlands

Pages from

111

Pages to

124

Pages count

14

URL

https://www.sciencedirect.com/science/article/pii/S0304399118303097?via%3Dihub

BibTex

@article{BUT156365,
  author="Michael {Stöger-Pollach} and Kristýna {Bukvišová} and Sabine {Schwarz} and Michal {Kvapil} and Tomáš {Šamořil} and Michal {Horák}",
  title="Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors",
  journal="Ultramicroscopy",
  year="2019",
  volume="200",
  number="1",
  pages="111--124",
  doi="10.1016/j.ultramic.2019.03.001",
  issn="0304-3991",
  url="https://www.sciencedirect.com/science/article/pii/S0304399118303097?via%3Dihub"
}