Publication detail

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

KONEČNÝ, M. BARTOŠÍK, M. MACH, J. ŠVARC, V. NEZVAL, D. PIASTEK, J. PROCHÁZKA, P. CAHLÍK, A. ŠIKOLA, T.

Original Title

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

Type

journal article in Web of Science

Language

English

Original Abstract

The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer− Emmett−Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM. In the computational part, a quantitative model based on solving the diffusion-like equation for the charge transport is used to fit the experimental data and thus to find the SiO2 surface resistivity ranging from 107 to 1010 Ω and exponentially decreasing with the RH increase. Such a behavior is explained using the formation of water layers predicted by the BET adsorption theory and electron-hopping theory that for the SiO2 surface patterned by AFM predicts a high water coverage even at low RHs.

Keywords

graphene, silicon dioxide, KPFM, RH, BET, electron hopping

Authors

KONEČNÝ, M.; BARTOŠÍK, M.; MACH, J.; ŠVARC, V.; NEZVAL, D.; PIASTEK, J.; PROCHÁZKA, P.; CAHLÍK, A.; ŠIKOLA, T.

Released

11. 4. 2018

ISBN

1944-8244

Periodical

ACS APPL MATER INTER

Year of study

10

Number

14

State

United States of America

Pages from

11987

Pages to

11994

Pages count

8

URL

https://pubs.acs.org/doi/10.1021/acsami.7b18041

BibTex

@article{BUT147242,
  author="Martin {Konečný} and Miroslav {Bartošík} and Jindřich {Mach} and Vojtěch {Švarc} and David {Nezval} and Jakub {Piastek} and Pavel {Procházka} and Aleš {Cahlík} and Tomáš {Šikola}",
  title="Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity",
  journal="ACS APPL MATER INTER",
  year="2018",
  volume="10",
  number="14",
  pages="11987--11994",
  doi="10.1021/acsami.7b18041",
  issn="1944-8244",
  url="https://pubs.acs.org/doi/10.1021/acsami.7b18041"
}