Publication detail

Analysis of memristors with nonlinear memristance versus state maps

BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V. KOLKA, Z. ASCOLI, A. TETZLAFF, R.

Original Title

Analysis of memristors with nonlinear memristance versus state maps

Type

journal article in Web of Science

Language

English

Original Abstract

According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance vs. charge (or flux) map. The original model of the “HP memristor“ introduces this map via a linear function, that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of charge flowing through. However, some analog applications require nonlinear, frequently exponential or logarithmic dependence of the resistance on an external controlling variable. The memristor with nonlinear memristance vs. charge map is analyzed in the paper. The results are specified for the exponential type of this nonlinearity, which may be useful for future applications. Analytic formulae of the area of the pinched hysteresis loop of such a memristor are derived for harmonic excitation. It is also shown that the current flowing through such a memristor, which is driven by a voltage of arbitrary waveform, conforms to the Abel differential equation, and its closed-form solution is found.

Keywords

Memristor; Hysteresis; Exponential; PSM; Constitutive Relation; Pinched Hysteresis Loop

Authors

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.; KOLKA, Z.; ASCOLI, A.; TETZLAFF, R.

Released

25. 1. 2017

Publisher

John Wiley & Sons, Inc.

Location

USA

ISBN

1097-007X

Periodical

International Journal of Circuit Theory and Applications

Year of study

2017

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1814

Pages to

1832

Pages count

19

URL

BibTex

@article{BUT141088,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="Analysis of memristors with nonlinear memristance versus state maps",
  journal="International Journal of Circuit Theory and Applications",
  year="2017",
  volume="2017",
  number="1",
  pages="1814--1832",
  doi="10.1002/cta.2314",
  issn="1097-007X",
  url="http://dx.doi.org/10.1002/cta.2314"
}