Publication detail

Measurement of Power Transistors Dynamic Parameters

PROCHÁZKA, P. MIKLÁŠ, J. PAZDERA, I. PATOČKA, M. KNOBLOCH, J. CIPÍN, R.

Original Title

Measurement of Power Transistors Dynamic Parameters

Type

conference paper

Language

English

Original Abstract

This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.

Keywords

Power transistor; IGBT transistor; Measurement circuit; Switching process

Authors

PROCHÁZKA, P.; MIKLÁŠ, J.; PAZDERA, I.; PATOČKA, M.; KNOBLOCH, J.; CIPÍN, R.

Released

1. 1. 2018

Publisher

Springer

ISBN

978-3-319-65959-6

Book

MECHATRONICS 2017

Pages from

571

Pages to

577

Pages count

7

URL

https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70

BibTex

@inproceedings{BUT139870,
  author="Petr {Procházka} and Ján {Mikláš} and Ivo {Pazdera} and Miroslav {Patočka} and Jan {Knobloch} and Radoslav {Cipín}",
  title="Measurement of Power Transistors Dynamic Parameters",
  booktitle="MECHATRONICS 2017",
  year="2018",
  pages="571--577",
  publisher="Springer",
  doi="10.1007/978-3-319-65960-2\{_}70",
  isbn="978-3-319-65959-6",
  url="https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70"
}