Publication detail

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

HOFMAN, J. HÁZE, J. SHARP, R. JAKSIC, A. VASOVIC, N.

Original Title

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

English Title

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Type

conference paper

Language

en

Original Abstract

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

English abstract

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

Keywords

RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods

Released

11.07.2016

Publisher

IEEE

Location

Portland, US

ISBN

978-1-4673-2730-5

Book

Radiation Effects Data Workshop (REDW), 2016 IEEE

Pages from

1

Pages to

4

Pages count

4

Documents

BibTex


@inproceedings{BUT127872,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Aleksandar {Jaksic} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  annote="This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.",
  address="IEEE",
  booktitle="Radiation Effects Data Workshop (REDW), 2016 IEEE",
  chapter="127872",
  howpublished="online",
  institution="IEEE",
  year="2016",
  month="july",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}