Publication detail

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

HOFMAN, J. HÁZE, J. SHARP, R. HOLMES-SIEDLE, A.

Original Title

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

English Title

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

Type

journal article in Web of Science

Language

en

Original Abstract

This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.

English abstract

This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.

Keywords

Automated test equipment, MTC, PMOS, RADFET, TID, temperature coefficients, temperature effects test methods, test software, thermoelectric cooler, thermometers

RIV year

2015

Released

26.11.2015

Publisher

IEEE Periodicals

Location

Piscataway, NJ 08854 USA

Pages from

2525

Pages to

2531

Pages count

6

URL

Documents

BibTex


@article{BUT119754,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters",
  annote="This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.",
  address="IEEE Periodicals",
  chapter="119754",
  doi="10.1109/TNS.2015.2498948",
  howpublished="print",
  institution="IEEE Periodicals",
  number="6",
  volume="62",
  year="2015",
  month="november",
  pages="2525--2531",
  publisher="IEEE Periodicals",
  type="journal article in Web of Science"
}