Publication detail

The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry

HORÁK, M. STÖGER-POLLACH, M.

Original Title

The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry

Type

journal article in Web of Science

Language

English

Original Abstract

Since the advent of monochromated electron energy loss spectrometry (EELS) the experimental detection of band gaps in semiconducting materials is of great importance. In the non-relativistic limit of this technique the onset of the inelastic signal represents the band gap. But due to relativistic energy losses, like Čerenkov losses and the corresponding light guiding modes, appearing at high beam energies the band gap is usually hidden. The highest beam energy, which does not excite relativistic losses in a certain material, is called the Čerenkov limit of the material. In this work the low loss EELS signals of Si, GaAs and GaP are measured at various beam energies and the calculated Čerenkov limits are experimentally confirmed.

Keywords

Low voltage EELS; Band gap; Čerenkov radiation

Authors

HORÁK, M.; STÖGER-POLLACH, M.

RIV year

2015

Released

6. 6. 2015

ISBN

0304-3991

Periodical

Ultramicroscopy

Year of study

157

Number

1

State

Kingdom of the Netherlands

Pages from

73

Pages to

78

Pages count

6

BibTex

@article{BUT115185,
  author="Michal {Horák} and Michael {Stöger-Pollach}",
  title="The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry",
  journal="Ultramicroscopy",
  year="2015",
  volume="157",
  number="1",
  pages="73--78",
  doi="10.1016/j.ultramic.2015.06.005",
  issn="0304-3991"
}