Publication detail

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Jiri Hofman

Original Title

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

English Title

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Type

lecture

Language

en

Original Abstract

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

English abstract

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

Keywords

total ionizing dose, PMOS transistor, voltage reference, temperature coefficient

Released

25.03.2015

Pages from

1

Pages to

26

Pages count

26

Documents

BibTex


@misc{BUT114090,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices",
  annote="This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.",
  chapter="114090",
  year="2015",
  month="march",
  pages="1--26",
  type="lecture"
}